Development of reliable computers depends on effective electronic packaging which, in turn, builds on device interconnections at all levels of packaging. Modern electronic interconnections consist of spring like microcontacts made of metallic materials. When in a functional engagement, these springs must produce the desired contact forces in order to assure reliable interconnections. However, when loaded, the springs undergo stress relaxation thereby reducing the effective contact forces which leads to degradation in the electronic interconnection. An effective way to counteract this degradation is to account for the undesirable effects of the stress relaxation while designing the interconnections. The only way to do so is to understand the processes controlling this phenomenon. In this paper, viability of a computational and experimental hybrid approach for determination of stress relaxation characteristics in microelectronic connectors is studied. This approach combines the computational and the experimental aspects of the finite element and the grating interferometry methods, repsectively. Principles of the hybrid approach are outlined and its preliminary implementation is demonstrated by an application to the specific contact for high density, high speed digital interconnections. Since this contact was designed to be used in applications where quick connects and disconnects are needed, in order to provide separable interconnections reusable a number of times, knowledge of the stress relaxation characteristics of this contact, during each connect and disconnect cycle, is essential to assure its functionality. Preliminary results show good correlation between the computational and the experimental data and demonstrate viability of the hybrid approach for analysis of stress relaxation in the microelectronic connectors.