25 September 1995 Atom-resolved study of laser-induced etching processes at chlorine-adsorbed Si(111) surfaces
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Abstract
Structural changes of chlorine-adsorbed silicon(111)-7X7 surfaces by laser light were studied with a scanning tunneling microscope, and desorption species (SiCox) from the surface were measured with a quadrupole mass spectrometer, avoiding strong thermal effects. For the laser stimulation with 4.7 eV in photon energy to chlorine saturated surfaces, we found that the remaining surfaces change to have a structure of the restatom order with a number of irregularities, and that SiCl2 is primarily desorbed out. These results are ascribed to the stability of monochlorides and the instability of polychlorides for the electronic excitation by the light. We also found a drastic difference in the threshold laser fluence for the detection of desorbed SiCl2 between the photon energy of 1.2 and that of 2.3 eV. One of the possible desorption processes is that photo-generated bulk carriers induces that bond breaking of polychlorides on the substrate.
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Fumio Komori, Fumio Komori, Ken Hattori, Ken Hattori, } "Atom-resolved study of laser-induced etching processes at chlorine-adsorbed Si(111) surfaces", Proc. SPIE 2547, Laser Techniques for Surface Science II, (25 September 1995); doi: 10.1117/12.221475; https://doi.org/10.1117/12.221475
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