26 September 1995 Escape probability for negative electron affinity photocathodes: calculations compared to experiments
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Abstract
A Monte Carlo technique has been used to calculate the electron energy distributions and the escape probabilities (EP) for the negative electron affinity (NEA) GaAs transmission photocathode. The results are compared with experimental data. A simple model, which assumes electrons from the (Gamma) minimum and that ideal conditions exist at the semiconductor-vacuum interface, does not work properly. Different types of scattering in the activation layer and a nonideal interface are considered as possible causes for the discrepancies between calculations and experiments. The results show that a non-ideal interface could be the best candidate for explaining the behavior of the electron angular distribution.
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German Vergara, Alberto Herrera-Gomez, William E. Spicer, "Escape probability for negative electron affinity photocathodes: calculations compared to experiments", Proc. SPIE 2550, Photodetectors and Power Meters II, (26 September 1995); doi: 10.1117/12.221422; https://doi.org/10.1117/12.221422
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