Paper
26 September 1995 Integrated optoelectronic waveguide detectors in SiGe for optical communications
Armin O. Splett, Thomas Zinke, Berndt Schueppert, Klaus Petermann, Horst Kibbel, Hans-Joest Herzog, Hartmut Presting
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Abstract
The monolithic integration of a SiGe-optical waveguide with a detector based on SiGe- absorbing layers is presented. A maximum internal quantum efficiency of (eta) equals 40% has been measured at (lambda) equals 1.3 micrometers , which corresponds to an external efficiency of (eta) equals 11%. This device is suitable for 2.5 GBit/s data transmission, the performance is limited by the RC time constant due to a capacitance of C equals 1.7 pF.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Armin O. Splett, Thomas Zinke, Berndt Schueppert, Klaus Petermann, Horst Kibbel, Hans-Joest Herzog, and Hartmut Presting "Integrated optoelectronic waveguide detectors in SiGe for optical communications", Proc. SPIE 2550, Photodetectors and Power Meters II, (26 September 1995); https://doi.org/10.1117/12.221403
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Cited by 8 scholarly publications.
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KEYWORDS
Silicon

Waveguides

Sensors

Silicon carbide

Absorption

Internal quantum efficiency

Photodetectors

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