256 x 256 3- to 5-um focal plane array at 77 K operation

Dominique Marion; Jacques Cluzel; Francois Mongellaz; Philippe Rambaud; Michel Ravetto

doi:10.1117/12.218277

8 September 1995 256 x 256 3- to 5-um focal plane array at 77 K operation

Dominique Marion, Jacques Cluzel, Francois Mongellaz, Philippe Rambaud, Michel Ravetto

Proceedings Volume 2552, Infrared Technology XXI; (1995) https://doi.org/10.1117/12.218277
Event: SPIE's 1995 International Symposium on Optical Science, Engineering, and Instrumentation, 1995, San Diego, CA, United States

Abstract

A 256 by 256 IRCMOS array with a 35 micrometer pitch operating in the (3 - 5) micrometer wavelength range at 77 K has been developed at LETI/LIR. The readout circuit was designed and processed with a 1.2 micrometer design rules standard CMOS technology. Photovoltaic (PV) detectors, made on liquid phase epitaxy (LPE) layers, are interconnected by indium bumps on the readout circuit. A description of the readout circuit is given and the main electro-optical characteristics of the component are presented. The detector arrays exhibit a quantum efficiency of 60% with a non-uniformity of less than 4%. The pixel operability is greater than 99.5 %. In spite of the non-optimized threshold voltage of the technology, the charge handling capacity reaches 20.10⁶ e^- for the 35 micrometer pitch. This allows an NEDT of 12 mK at the output midpoint. Excellent imagery has been obtained with this component operating at 77 K using f/2 optics. The imagery has high contrast with no significant fixed pattern noise.

Citation Download Citation

Dominique Marion, Jacques Cluzel, Francois Mongellaz, Philippe Rambaud, and Michel Ravetto "256 x 256 3- to 5-um focal plane array at 77 K operation", Proc. SPIE 2552, Infrared Technology XXI, (8 September 1995); https://doi.org/10.1117/12.218277

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