8 September 1995 256 x 256 element HgCdTe hybrid IRFPA for 8- to 10-um band
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We developed a 256 by 256 element HgCdTe hybrid infrared focal plane array (IRFPA) for the 8 to 10 micrometer band. We used three technologies to develop this high-performance, long-wavelength, large-scale IRFPA. The first innovation was to glue a sapphire substrate to a thinned Si readout circuit to reduce the thermal expansion mismatch with a HgCdTe diode array fabricated on a CdZnTe substrate. The second was to fabricate an interlaced switched- FET readout circuit using a 3 micrometer CMOS process. This readout circuit has a storage capacity of more than 107 electrons and two video outputs capable of a 3.5 MHz data rate. The third was a HgCdTe diode array with an anodic sulfide passivation film and an optimized cutoff wavelength to reduce dark current and achieve high sensitivity. The noise equivalent temperature difference (NETD) was 0.06 K using f/2.5 optics. After 1000 thermal cycles (300 K - 80 K), there were no significant indium bump failures nor notable degradation in detector performance.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Toshio Kanno, Toshio Kanno, Hideo Wada, Hideo Wada, Mitsuhiro Nagashima, Mitsuhiro Nagashima, Hiroyuki Wakayama, Hiroyuki Wakayama, Kenji Awamoto, Kenji Awamoto, Nobuyuki Kajihara, Nobuyuki Kajihara, Yuichiro Ito, Yuichiro Ito, M. Nakamura, M. Nakamura, } "256 x 256 element HgCdTe hybrid IRFPA for 8- to 10-um band", Proc. SPIE 2552, Infrared Technology XXI, (8 September 1995); doi: 10.1117/12.218237; https://doi.org/10.1117/12.218237

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