8 September 1995 256 x 256 element HgCdTe hybrid IRFPA for 8- to 10-um band
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Abstract
We developed a 256 by 256 element HgCdTe hybrid infrared focal plane array (IRFPA) for the 8 to 10 micrometer band. We used three technologies to develop this high-performance, long-wavelength, large-scale IRFPA. The first innovation was to glue a sapphire substrate to a thinned Si readout circuit to reduce the thermal expansion mismatch with a HgCdTe diode array fabricated on a CdZnTe substrate. The second was to fabricate an interlaced switched- FET readout circuit using a 3 micrometer CMOS process. This readout circuit has a storage capacity of more than 107 electrons and two video outputs capable of a 3.5 MHz data rate. The third was a HgCdTe diode array with an anodic sulfide passivation film and an optimized cutoff wavelength to reduce dark current and achieve high sensitivity. The noise equivalent temperature difference (NETD) was 0.06 K using f/2.5 optics. After 1000 thermal cycles (300 K - 80 K), there were no significant indium bump failures nor notable degradation in detector performance.
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Toshio Kanno, Hideo Wada, Mitsuhiro Nagashima, Hiroyuki Wakayama, Kenji Awamoto, Nobuyuki Kajihara, Yuichiro Ito, M. Nakamura, "256 x 256 element HgCdTe hybrid IRFPA for 8- to 10-um band", Proc. SPIE 2552, Infrared Technology XXI, (8 September 1995); doi: 10.1117/12.218237; https://doi.org/10.1117/12.218237
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