8 September 1995 Development of Si:Ga/DVR 128 x 192 element arrays for 8- to 14-um observation
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Abstract
New gallium-doped silicon 128 by 192 element arrays have been achieved at CEA-LETI-LIR (Infrared Laboratory) for imaging in the 8 - 14 micrometer spectral range. This program is in keeping with the previous detector development for the ISOCAM camera (32 by 32 element arrays) and for ground-based observation (64 by 64 element arrays). The main features of the new detectors are: a pitch of 75 micrometer which leads to 10 by 15 mm2 chip dimensions, two selectable storage capacitors (respectively 0.1 and 0.5 pF), a DVR readout circuit achieved in an NMOS silicon line with 1.5 micrometer design rules. The main electro- optical performances are the following: a peak responsivity of 4.0 A/W, a noise of 58 fA rms over the 0.1 - 128 Hz spectral range which is very close to the BLIP noise, and a corresponding noise equivalent power of 1.4 10-14 W.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Frederic Rothan, Frederic Rothan, Isabelle Bischoff, Isabelle Bischoff, Gilles Chammings, Gilles Chammings, Michel Ravetto, Michel Ravetto, Michel Vilain, Michel Vilain, Philippe Galdemard, Philippe Galdemard, Rene Jouan, Rene Jouan, Pierre-Olivier Lagage, Pierre-Olivier Lagage, Pierre Masse, Pierre Masse, } "Development of Si:Ga/DVR 128 x 192 element arrays for 8- to 14-um observation", Proc. SPIE 2552, Infrared Technology XXI, (8 September 1995); doi: 10.1117/12.218279; https://doi.org/10.1117/12.218279
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