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8 September 1995 Noninvasive thermal imaging of GaAs MESFETs
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We demonstrate the use of an infrared focal plane array (IR-FPA) to measure the spatially resolved surface temperature of a GaAs MESFET (gallium arsenide metal-semiconductor field-effect transistor) under dc and rf operating conditions. By compensating for variations of the small emissivity, absolute temperatures of plus or minus 5 degrees Celsius, and small temperature differences of 1 degree Celsius can be determined. By deconvolution of the lens MTF (modulation transfer function) we attain a resolution of 6.25 micrometer. The combination of thermal and spatial sensitivity makes our set-up ideally suited for non- destructive characterization of semiconductor devices.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. de Boer, Hans Winkel, J. Verduyn, Frank L. M. van den Bogaart, and Jan S. de Vries "Noninvasive thermal imaging of GaAs MESFETs", Proc. SPIE 2552, Infrared Technology XXI, (8 September 1995);

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