8 September 1995 Status of MWIR HgCdTe photovoltaic detector technology in Australia
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This paper reviews the development and present status of mid-wavelength infrared (MWIR) HgCdTe photodiode technology in Australia. MWIR n-on-p photodiodes have been produced by both mercury in-diffusion and by boron ion-implantation on Hg-vacancy doped p-type HgCdTe. The photodiodes are planar structures passivated with thermally evaporated ZnS. High performance MWIR photodiodes have been developed with RoA product of 2 X 106 (Omega) cm2 at 77 K. Recent work has focused on developing novel passivation processes based on anodic sulphurdization in which thermally evaporated ZnS is subsequently anodized in a non-aqueous sodium sulphide solution. Preliminary results suggest that this improves the insulating properties of thermally evaporated ZnS layers. The leakage currents, as measured through a 1 mm2 MIS structure at a 1 V bias at 77 K, for the anodized ZnS layer are in the sub-picoamp range for all devices fabricated, whereas for the non-anodized layer the leakage currents are typically much larger by up to 3 - 4 orders of magnitude.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kevin A. Fynn, Kevin A. Fynn, John F. Siliquini, John F. Siliquini, Brett D. Nener, Brett D. Nener, John M. Dell, John M. Dell, Lorenzo Faraone, Lorenzo Faraone, } "Status of MWIR HgCdTe photovoltaic detector technology in Australia", Proc. SPIE 2552, Infrared Technology XXI, (8 September 1995); doi: 10.1117/12.218210; https://doi.org/10.1117/12.218210


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