29 September 1995 Extrinsic semiconductor low-background infrared field-effect transistor of a new type
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An extrinsic semiconductor IR field-effect transistor of a new type has been developed and studied. It operates in a spectral range corresponding to its bulk material extrinsic photoresponsivity and possesses a quantum efficiency on the order of that of the same material photoconductor detectors. Its principle of operation is based on the variation of the near- contact electric field on a change in the concentration of free charge carriers in the bulk. A low-frequency current responsivity of 106-107 A/W for experimental SI:Ga samples has been attained under a background intensity of 1011 cm-2s-1. The low-frequency responsivity changes in inverse proportion to the level of background and can achieve a very high value with a decrease in it. The 3-dB cutoff frequency of photoresponse is close to the cutoff frequency of the low- frequency photoresponse plateau for the similar photoconductor detectors. A physical model has been developed which makes it possible to carry out approximate designing of such devices. Experimental samples of 16-element phototransistor linear arrays have been developed.
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Nicolas B. Zaletaev, Nicolas B. Zaletaev, Vasily F. Kocherov, Vasily F. Kocherov, "Extrinsic semiconductor low-background infrared field-effect transistor of a new type", Proc. SPIE 2553, Infrared Spaceborne Remote Sensing III, (29 September 1995); doi: 10.1117/12.221389; https://doi.org/10.1117/12.221389

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