PROCEEDINGS VOLUME 2554
SPIE'S 1995 INTERNATIONAL SYMPOSIUM ON OPTICAL SCIENCE, ENGINEERING, AND INSTRUMENTATION | 9-14 JULY 1995
Growth and Characterization of Materials for Infrared Detectors II
IN THIS VOLUME

4 Sessions, 29 Papers, 0 Presentations
SPIE'S 1995 INTERNATIONAL SYMPOSIUM ON OPTICAL SCIENCE, ENGINEERING, AND INSTRUMENTATION
9-14 July 1995
San Diego, CA, United States
Detector Materials Growth
Proc. SPIE 2554, Molecular beam epitaxial growth and optical properties of (001) HgTe/Hg1-xCdxTe superlattices, 0000 (1 September 1995); https://doi.org/10.1117/12.218176
Proc. SPIE 2554, Iso-VPE growth of Hg1-xCdxTe on hybrid substrates, 0000 (1 September 1995); https://doi.org/10.1117/12.218182
Proc. SPIE 2554, Direct MBE growth of HgCdTe(112) IR detector structures on Si(112) substrates, 0000 (1 September 1995); https://doi.org/10.1117/12.218189
Proc. SPIE 2554, Epitaxy of narrow gap IV-VI materials on Si(111) and Si(100) substrates: growth, properties, and thermal mismatch strain accommodation, 0000 (1 September 1995); https://doi.org/10.1117/12.218196
Proc. SPIE 2554, Growth and properties of semiconductor bolometers for infrared detection, 0000 (1 September 1995); https://doi.org/10.1117/12.218201
Proc. SPIE 2554, Recent progress in the doping of MBE HgCdTe, 0000 (1 September 1995); https://doi.org/10.1117/12.218203
Detector Materials Characterization
Proc. SPIE 2554, InAs/GaSb superlattices characterized by high-resolution x-ray diffraction and infrared optical spectroscopy, 0000 (1 September 1995); https://doi.org/10.1117/12.218204
Proc. SPIE 2554, Charge spectroscopy of localized states in thin film heterostructures, 0000 (1 September 1995); https://doi.org/10.1117/12.218177
Proc. SPIE 2554, Evaluation of HgCdTe using laser beam induced current, 0000 (1 September 1995); https://doi.org/10.1117/12.218178
Proc. SPIE 2554, Nondestructive characterization technique for most n-type semiconductors, including infrared detector materials, 0000 (1 September 1995); https://doi.org/10.1117/12.218179
Detector Processing
Proc. SPIE 2554, InAs-GaSb-AlSb quantum confined structures for IR applications, 0000 (1 September 1995); https://doi.org/10.1117/12.218180
Proc. SPIE 2554, CdZnTe substrate and HgCdTe epilayer effects on the performance of photovoltaic diodes, 0000 (1 September 1995); https://doi.org/10.1117/12.218181
Proc. SPIE 2554, Homojunction interfacial workfunction internal photoemission (HIWIP) infrared detectors, 0000 (1 September 1995); https://doi.org/10.1117/12.218183
Proc. SPIE 2554, Processing and characterization of a 128 x 128 GaAs/GaAlAs quantum well infrared detector array, 0000 (1 September 1995); https://doi.org/10.1117/12.218184
Proc. SPIE 2554, Advances in infrared antimonide technology, 0000 (1 September 1995); https://doi.org/10.1117/12.218185
Proc. SPIE 2554, CoSi2/Si1-xGex interfaces for Schottky barrier infrared detectors with extended detection regime, 0000 (1 September 1995); https://doi.org/10.1117/12.218186
Proc. SPIE 2554, New process for the controlled formation of ultrathin PtSi films for infrared detector applications, 0000 (1 September 1995); https://doi.org/10.1117/12.218187
Optical Materials Characterization Techniques
Proc. SPIE 2554, Depolarization effects in ellipsometric measurements of thick layers, 0000 (1 September 1995); https://doi.org/10.1117/12.218188
Proc. SPIE 2554, Luminescent properties of nitrogen doped gap semiconductor studied with photothermal deflection spectroscopy, 0000 (1 September 1995); https://doi.org/10.1117/12.218190
Proc. SPIE 2554, Characterization of candidate bonding glasses for composite IR window structures, 0000 (1 September 1995); https://doi.org/10.1117/12.218191
Proc. SPIE 2554, Optical properties of extended-chain polymers under stress, 0000 (1 September 1995); https://doi.org/10.1117/12.218192
Proc. SPIE 2554, Photochromics-doped polymer systems as erasable holographic recording media, 0000 (1 September 1995); https://doi.org/10.1117/12.218193
Proc. SPIE 2554, Photorefractivity and holographic applications of azo-dye doped PMMA recording materials, 0000 (1 September 1995); https://doi.org/10.1117/12.218194
Proc. SPIE 2554, Photoluminescence properties of ZnGa2O4:Mn phosphor powders, 0000 (1 September 1995); https://doi.org/10.1117/12.218195
Proc. SPIE 2554, Nondestructive characterization of Ti-doped and V-doped CdTe by time-dependent charge measurement, 0000 (1 September 1995); https://doi.org/10.1117/12.218197
Proc. SPIE 2554, Combined FD-CM numerical analysis of coplanar electrode waveguide for LiNbO3 automatic polarization controller, 0000 (1 September 1995); https://doi.org/10.1117/12.218198
Proc. SPIE 2554, Determination of the composition of a complex semiconductor compound from its thermal emission spectrum, 0000 (1 September 1995); https://doi.org/10.1117/12.218199
Proc. SPIE 2554, Linear optical constants of ultrathin copperphthalocyanine films from transmittance and reflectance data: error function minimization when the film thickness is below 20 nm, 0000 (1 September 1995); https://doi.org/10.1117/12.218200
Detector Materials Characterization
Proc. SPIE 2554, Optical and electrical properties of iodine-doped HgCdTe alloys and superlattices grown by metalorganic molecular beam epitaxy, 0000 (1 September 1995); https://doi.org/10.1117/12.218202
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