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1 September 1995 CdZnTe substrate and HgCdTe epilayer effects on the performance of photovoltaic diodes
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Abstract
An etch process was developed to determine the dislocation density on <111>B - Hg1-xCdxTe-epilayers grown by liquid phase epitaxy from a tellurium-rich solution. A correlation between the etch pit density and the Cd1-yZnyTe-substrate material properties is found. Additionally the yield of photovoltaic diode performance strongly depends on the value of these measured dislocation densities. This method acts as a pass/fail evaluation for the epilayers used in our infrared device fabrication.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Martin Bruder, Heinrich Figgemeier, L. Palm, Johann Ziegler, and Horst Maier "CdZnTe substrate and HgCdTe epilayer effects on the performance of photovoltaic diodes", Proc. SPIE 2554, Growth and Characterization of Materials for Infrared Detectors II, (1 September 1995); https://doi.org/10.1117/12.218181
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