Paper
1 September 1995 CoSi2/Si1-xGex interfaces for Schottky barrier infrared detectors with extended detection regime
Sabine Kolodinski, Ricardo A. Donaton, Elisenda Roca, Matty Caymax, Karen Maex
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Abstract
A CoSi2/strained-Si1-xGex-Schottky barrier detector is proposed for detection of infrared radiation in the 3 - 5 micrometers window. It could be a substitute for PtSi/Si-Schottky barrier detectors, which have already been integrated with readout electronics, but which imply the disadvantage of having the metal Pt in the line as a possible source of contamination. A silicidation study on strained Si1-xGex-layers with sacrificial Si-layers on top has been carried out to realize CoSi2/strained-Si1-xGex-interfaces, which will form the heart of the detector. The possibilities to integrate this detector with readout electronics are critically reviewed. First CoSi2/Si1-xGex-detectors have been processed which yield barrier heights as low as 229 meV.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sabine Kolodinski, Ricardo A. Donaton, Elisenda Roca, Matty Caymax, and Karen Maex "CoSi2/Si1-xGex interfaces for Schottky barrier infrared detectors with extended detection regime", Proc. SPIE 2554, Growth and Characterization of Materials for Infrared Detectors II, (1 September 1995); https://doi.org/10.1117/12.218186
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Cited by 2 scholarly publications.
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KEYWORDS
Sensors

Silicon

Metals

Germanium

Platinum

Infrared detectors

Etching

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