1 September 1995 Determination of the composition of a complex semiconductor compound from its thermal emission spectrum
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Abstract
The possibility of use of the thermal emission of a complex semiconductor compound for determination of its forbidden band gap and, hence, the composition is examined. Measurements were carried out on p-type Hg1-xCdxTe films with 0.197 <EQ X <EQ 0.233 at room temperature.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Victor A. Botte, Victor A. Botte, } "Determination of the composition of a complex semiconductor compound from its thermal emission spectrum", Proc. SPIE 2554, Growth and Characterization of Materials for Infrared Detectors II, (1 September 1995); doi: 10.1117/12.218199; https://doi.org/10.1117/12.218199
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