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1 September 1995 Direct MBE growth of HgCdTe(112) IR detector structures on Si(112) substrates
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Molecular-beam epitaxy (MBE) has been utilized to deposit single crystal epitaxial films of CdTe(112)B and HgCdTe(112)B directly onto Si(112) substrates without the use of GaAs interfacial layers. The films have been characterized with x-ray diffraction and wet chemical defect etching, and IR detectors have been fabricated and tested. CdTe(112)B films are twin- free and have x-ray rocking curves as narrow as 72 arc-seconds and near-surface etch pit density (EPD) of 2 X 106 cm-2 for 8 micrometers -thick films. HgCdTe(112)B films deposited on Si substrates have x-ray rocking curve FWHM as low as 92 arc-seconds and EPD of 8 - 30 X 106 cm-2. HgCdTe/Si infrared detectors have been fabricated with R0A equals 4.3 X 103 (Omega) -cm2 (f/2 FOV) and 7.8 micrometers cutoff wavelength at 78 K to demonstrate the capability of MBE for growth of large-area HgCdTe arrays on Si.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Terence J. de Lyon, Rajesh D. Rajavel, Owen K. Wu, Scott M. Johnson, Charles A. Cockrum, and G. M. Venzor "Direct MBE growth of HgCdTe(112) IR detector structures on Si(112) substrates", Proc. SPIE 2554, Growth and Characterization of Materials for Infrared Detectors II, (1 September 1995);


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