Homojunction interfacial workfunction internal photoemission (HIWIP) infrared detectors

A. G. Unil Perera

doi:10.1117/12.218183

1 September 1995 Homojunction interfacial workfunction internal photoemission (HIWIP) infrared detectors

A. G. Unil Perera

Proceedings Volume 2554, Growth and Characterization of Materials for Infrared Detectors II; (1995) https://doi.org/10.1117/12.218183
Event: SPIE's 1995 International Symposium on Optical Science, Engineering, and Instrumentation, 1995, San Diego, CA, United States

Abstract

A wavelength tunable far-infrared (FIR) detector based on the interfacial workfunction (IWF) between a heavily doped absorber/emitter layer and a lightly doped (or intrinsic) layer (same material) forming a homojunction is presented. The concept somewhat similar to the classic photoelectric effect was successfully demonstrated using commercial p-i-n structures. The forward biased Si, Ge, and InGaAs samples were operated at cryogenic temperatures. Threshold wavelengths ((lambda) _t) from around 40 - 220 micrometers for Si and up to 240 micrometers for Ge were experimentally obtained. A model was developed to analyze the photoresponse and the dark current leading to detector figures of merit. The effect of the space charge region on the barrier height and the barrier position is investigated for a thick sample similar to the p-i-n structures.

Citation Download Citation

A. G. Unil Perera "Homojunction interfacial workfunction internal photoemission (HIWIP) infrared detectors", Proc. SPIE 2554, Growth and Characterization of Materials for Infrared Detectors II, (1 September 1995); https://doi.org/10.1117/12.218183

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