Paper
1 September 1995 Iso-VPE growth of Hg1-xCdxTe on hybrid substrates
Sergio Bernardi
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Abstract
High quality 2 inch Hg1-xCdxTe/Sapphire structures are grown by an isothermal vapor phase epitaxy process starting from MOCVD CdTe/Sapphire hybrid substrates. HgTe growth and CdTe/HgTe solid state interdiffusion processes produce the transformation of the starting CdTe layer into a compositionally controlled Hg1-xCdxTe film on the inert base sapphire substrate grown. By using experimental growth conditions involving HgTe/CdTe interdiffusion rates higher than HgTe growth rates, in depth compositionally uniform Hg1-xCdxTe films can be obtained in a really simple one-step process. A 2-zone open tube vertical reactor improved for 2 inch wafers has been used for the present process, making it very attractive for manufacturing purposes. Morphological, optical, electrical, and structural characteristics of the iso-VPE mercury cadmium telluride on sapphire structures are reported witnessing their technological power as infrared materials.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sergio Bernardi "Iso-VPE growth of Hg1-xCdxTe on hybrid substrates", Proc. SPIE 2554, Growth and Characterization of Materials for Infrared Detectors II, (1 September 1995); https://doi.org/10.1117/12.218182
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Cited by 1 scholarly publication.
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KEYWORDS
Semiconducting wafers

Mercury

Liquid phase epitaxy

Metalorganic chemical vapor deposition

Sapphire

Annealing

Cadmium

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