Paper
1 September 1995 New process for the controlled formation of ultrathin PtSi films for infrared detector applications
Alfonso Torres, Sabine Kolodinski, Ricardo A. Donaton, Karen Maex, P. Roussel, Hugo Bender
Author Affiliations +
Abstract
A simple method for controlling the thickness of PtSi for infrared detectors is presented. Thicknesses of PtSi in the range of 2 - 5 nm can be controlled via the reaction kinetics of the silicidation. Compared to conventional furnace anneal, the thickness and homogeneity of the resulting PtSi-layers are independent of the deposited Pt-thickness. Superior uniformity, lower continuous film thicknesses of the PtSi-layers, and smoother PtSi/Si-interfaces than possible by conventional furnace anneal are achieved by applying this technique.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alfonso Torres, Sabine Kolodinski, Ricardo A. Donaton, Karen Maex, P. Roussel, and Hugo Bender "New process for the controlled formation of ultrathin PtSi films for infrared detector applications", Proc. SPIE 2554, Growth and Characterization of Materials for Infrared Detectors II, (1 September 1995); https://doi.org/10.1117/12.218187
Lens.org Logo
CITATIONS
Cited by 2 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Platinum

Infrared detectors

Metals

Annealing

Interfaces

Silicon

Process control

Back to Top