1 September 1995 Optical and electrical properties of iodine-doped HgCdTe alloys and superlattices grown by metalorganic molecular beam epitaxy
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Abstract
The electrical and optical properties of iodine doped n-type HgCdTe alloys and superlattices grown by metalorganic molecular beam epitaxy using ethyliodide are reviewed. The rationale for the use of iodine rather than indium as the dopant species and the incorporation kinetics of iodine at the growth surface are discussed. The electrical and optical properties of iodine- doped CdTe and HgCdTe (x equals 0.24) are presented for carrier concentrations between 1015 and 1018 cm-3, as determined by Hall effect measurements and low- and room-temperature photoluminescence spectroscopy. These samples show strong room temperature excitonic effects due to free exciton and band to band recombination as determined by photoluminescence excitation spectroscopy. The electrical and optical properties of iodine-doped HgCdTe-CdTe superlattices also are discussed based on magnetoluminescence measurements in tilted magnetic fields of up to 7 Tesla in Voigt and Faraday geometry.
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Christopher J. Summers, Christopher J. Summers, Ashesh Parikh, Ashesh Parikh, Tuyen K. Tran, Tuyen K. Tran, Jens Wolfgang Tomm, Jens Wolfgang Tomm, P. Schafer, P. Schafer, Nancy C. Giles, Nancy C. Giles, S. D. Pearson, S. D. Pearson, Rudolph G. Benz, Rudolph G. Benz, Brent K. Wagner, Brent K. Wagner, Robert N. Bicknell-Tassius, Robert N. Bicknell-Tassius, } "Optical and electrical properties of iodine-doped HgCdTe alloys and superlattices grown by metalorganic molecular beam epitaxy", Proc. SPIE 2554, Growth and Characterization of Materials for Infrared Detectors II, (1 September 1995); doi: 10.1117/12.218202; https://doi.org/10.1117/12.218202
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