1 September 1995 Processing and characterization of a 128 x 128 GaAs/GaAlAs quantum well infrared detector array
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Abstract
A 128 multiplied by 128 GaAs/GaAlAs quantum well infrared (QWIP) sensing array with a 2- D grating and indium bumps has been fabricated. The array has been characterized prior to flip chip bonding, both electrically and optically. The obtained responsivity and dark current of selected pixels in the array indicate high material uniformity. Design and processing issues are discussed.
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Shmuel I. Borenstain, Shmuel I. Borenstain, Uriel Arad, Uriel Arad, S. Afanasyev, S. Afanasyev, I. Luybina, I. Luybina, A. Segal, A. Segal, } "Processing and characterization of a 128 x 128 GaAs/GaAlAs quantum well infrared detector array", Proc. SPIE 2554, Growth and Characterization of Materials for Infrared Detectors II, (1 September 1995); doi: 10.1117/12.218184; https://doi.org/10.1117/12.218184
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