13 October 1995 Dispersion in arbitrary bilateral, antipodal, and unilateral fin lines and edge-coupled slot lines with semiconductor regions
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Abstract
The transverse transmission line method is used to study the effective dielectric constant, the attenuation constant, and the characteristc impedance for the odd-mode and the even-mode excitation of the edge-coupled slotlines, unilateral fin lines and bilateral asymmetric and antipodal finlines with semiconductor substrates. By applying the boundary conditions to the tangential electric fields, the fields in all dielectric regions are determined as functions of the electric fields in the slots. Applying the boundary conditions to the magnetic fields at the dielectric interface, an inhomogeneous equations system is obtained, in which the current densities in the fins are related to the electric fields in the slots. Using Galerkin's method and Parseval's theorem, it is possible to obtain the characteristic equation for determining the complex propagation constant. The effective dielectric constant is determined by means of the relation between the phase constant and the wave number of the free space and the characteristic impedance is determined. Computer programs are developed and the results given by them provide the analysis of the variation of the effective dielectric constant, the attenuation constant and the characteristic impedance. These results are compared with references in which the substrate is a lossless material and the agreement is quite good.
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Humberto Cesar Chaves Fernandes, Ailton Queiroz, Sidney Alexandre Silva, Carlos Laerte Rodrigues de Paiva, "Dispersion in arbitrary bilateral, antipodal, and unilateral fin lines and edge-coupled slot lines with semiconductor regions", Proc. SPIE 2558, Millimeter and Submillimeter Waves II, (13 October 1995); doi: 10.1117/12.224217; https://doi.org/10.1117/12.224217
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