13 October 1995 Processes of generation, amplification, and detection of millimeter and submillimeter waves by hot electrons in solid state structures
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Abstract
The experimental investigations of solid state structures in strong electric and magnetic fields, when the strongly anisotropic distribution of hot carriers are realized due to strong interaction of charge carriers with optical phonons in the momentum space are presented. The study was stimulated by the theoretically based possibility to realize the electron resonant dynamic bunching in the momentum space under appropriate conditions and also by the creation of the submillimeter p-Ge lasers. These investigations are directed to the development of solid state analogues of vacuum electronics devices. The effect of electrons redistribution between valleys and the essential nonequidistance of Landau levels have been observed in n-Ge crystals in the electric field above 1kV/cm. This has shown the prospects of laser effect in n-Ge, n-Si, diamond. The efficiency of laser effect in these materials has to be significantly greater than in p-Ge. The emergence of collective effects like the hot electron resonant bunching effect in the momentum space at a ballistic transport of electrons up to optical phonons energy in GaAs/AlGaAs heterostructures is discussed. In GaAs/AlGaAs heterostructures the complex structure of photovoltaic response dependent on frequency and polarization of the incident radiation has been observed. This effect reveals a possibliity to elaborate solid state detectors to analyse the parameters of millimeter and submillimeter waves.
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Andrey P. Chebotarev, Galina P. Chebotareva, Alexander P. Nikitin, D. L. Saprykin, "Processes of generation, amplification, and detection of millimeter and submillimeter waves by hot electrons in solid state structures", Proc. SPIE 2558, Millimeter and Submillimeter Waves II, (13 October 1995); doi: 10.1117/12.224242; https://doi.org/10.1117/12.224242
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