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13 October 1995 Sensitivity of low-dimensional crystals to submillimeter radiation
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The strong photoeffect was discovered experimentally in specially doped InSe crystals at temperatrue 4.2 K as a result of laser radiation action at fixed wavelengths of 337 and 195 microns. Also some of the kinetic, galvanomagnetic and optical anomalies had been observed. They are explained by appearance of the gap E in the conduction band continuum of degenerated 2D semiconductor charge density waves state. The long wave threshold of photocurrent was found to depend strongly on a magnitude of electric current (J) through the crystal. A rough estimation gives a value dE/dJ approximately 0.4 meV/mA. We had carried out experiments in order to study instabilities of InSe electrical properties in temperature range 4.2-300 K by quasi stationary conditions. Abrupt electrical resistivity increases about 5 times were observed by us at temperatures 5, 10, 14, 27, 31, 170, and 200 K.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexander I. Dmitriev and George V. Lashkarev "Sensitivity of low-dimensional crystals to submillimeter radiation", Proc. SPIE 2558, Millimeter and Submillimeter Waves II, (13 October 1995);

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