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1 October 1995 Analog characterization of a Franz-Keldysh electroabsorption modulator monolithically integrated with a DFB laser
Jan Oennegren; Jan Svedin; Olof Sahlen; Mats Jansson; Arne G. Alping
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Proceedings Volume 2560, Optical Technology for Microwave Applications VII; (1995) https://doi.org/10.1117/12.218530
Event: SPIE's 1995 International Symposium on Optical Science, Engineering, and Instrumentation, 1995, San Diego, CA, United States
Abstract
Electroabsorption modulators (EA) are attractive components for very high speed digital links (up to 40 Gbit/s). The objective of the present work has been to evaluate the analog performance and use of a Franz Keldysh modulator (FK) monolithically integrated with a DFB laser (DFB/FK-modulator) operating at 1550 nm. This DFB/FK-modulator is a combination of a directly modulated laser diode and an external modulator in one chip. The analog performance is therefore depending on both the modulator bias voltage and DFB-laser bias current. The normal optical output characteristic from an EA-modulator has a strongly nonlinear behavior. The modulator described in this paper shows for low bias voltage and/or high laser current a linear bahavior. This linear behavior is mainly due to the hole pile-up effect at the p/i-interface of the modulator. In digital transmission system this hole pile-up effect is a disadvantage, but in an analog transmission system it can be used to achieve better analog performance. Measurements (and simulations) on the DFB/FK-modulator show that its analog performance competes well with direct modulated FP and DFB lasers, especially if the modulator is biased for optimum analog performance.
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Jan Oennegren, Jan Svedin, Olof Sahlen, Mats Jansson, and Arne G. Alping "Analog characterization of a Franz-Keldysh electroabsorption modulator monolithically integrated with a DFB laser", Proc. SPIE 2560, Optical Technology for Microwave Applications VII, (1 October 1995); https://doi.org/10.1117/12.218530
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