15 January 1996 Demonstration of highly reliable nonhermetic planar InGaAs/InP photodiodes
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Proceedings Volume 2610, Laser Diode Chip and Packaging Technology; (1996) https://doi.org/10.1117/12.230075
Event: Photonics East '95, 1995, Philadelphia, PA, United States
Abstract
Reliable non-hermetic photodiodes are expected to reduce the cost of optoelectronics used in fiber to the home and cable TV system. However, all reports to date indicate non-hermetic InGaAs/InP photodiodes do not have sufficient reliability for use in the systems. In this paper, we report the first data that conclusively shows, properly designed and manufactured non- hermetic InGaAs/InP photodiodes can be made with reliability sufficient to use in telecommunication systems. We have produced non-hermetic photodiodes whose hazard rate at 15 years of field use at 45 degrees Celsius and 50% RH is less than 100 FITs, the requirement for telecommunication systems.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John W. Osenbach, John W. Osenbach, T. L. Evanosky, T. L. Evanosky, Suniel B. Phatak, Suniel B. Phatak, Robert B. Comizzoli, Robert B. Comizzoli, Naresh Chand, Naresh Chand, } "Demonstration of highly reliable nonhermetic planar InGaAs/InP photodiodes", Proc. SPIE 2610, Laser Diode Chip and Packaging Technology, (15 January 1996); doi: 10.1117/12.230075; https://doi.org/10.1117/12.230075
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