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15 January 1996 Extremely low-threshold 1.3-um strained-MQW lasers for parallel high-speed optical interconnections
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Proceedings Volume 2610, Laser Diode Chip and Packaging Technology; (1996)
Event: Photonics East '95, 1995, Philadelphia, PA, United States
An ultralow-threshold 1.3-micrometer InGaAsP/InP ten-element monolithic laser array has been grown on a p-InP substrate entirely by metal-organic vapor phase epitaxy. This was achieved by carefully optimizing the strained-MQW active layer, especially the amount of strain, the well thickness, the barrier thickness, the number of wells, and the active layer width. This array has a record-low threshold current, highly uniform threshold current characteristics (1.28 plus or minus 0.07 mA; slope efficiency of 0.37 plus or minus 0.01 W/A), extremely low operating current (14 mA under 5-mW output power), and long-term reliability. It is thus suitable as a practical light source in high-density parallel optical data-link applications. In addition, best-ever continuous-wave threshold currents of 0.58 mA at 20 degrees Celsius and 1.62 mA at 90 degrees Celsius, for a long-wavelength laser, were obtained by using a short cavity (100 micrometers) with high-reflection coatings. The reduced carrier lifetime and threshold current of an n-type modulation-doped strained-MQW laser were experimentally demonstrated to drastically reduce turn-on delay time.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kazuhisa Uomi "Extremely low-threshold 1.3-um strained-MQW lasers for parallel high-speed optical interconnections", Proc. SPIE 2610, Laser Diode Chip and Packaging Technology, (15 January 1996);

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