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27 December 1995 Resonant-cavity photodetectors for optical communications
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Abstract
The rapid emergence of high-performance optical systems has accentuated the need for photodiodes with enhanced performance and functionality. In this paper we will describe a new class of photodiodes that utilize novel resonant-cavity structures to achieve high speed, high quantum efficiency, and a narrow spectral response which may prove useful for some wavelength division multiplexing applications. The resonant-cavity photodiode consists of a thin absorbing layer sandwiched between two dielectric mirrors. One advantage of this structure is that it can be utilized to circumvent the responsivity/bandwidth tradeoff inherent to conventional PIN photodiodes structures. For the typical normal-incidence photodiode a wide bandwidth necessitates a thin absorption layer which, in turn, results in low quantum efficiency. The resonant-cavity structure, on the other hand, effectively decouples the responsivity from the transit-time component of the bandwidth because the optical signal makes multiple passes across the thin absorbing layer inside the microcavity. The resonant- cavity approach has been utilized for p-i-n photodiodes, phototransistors, dual-wavelength photodetectors, avalanche photodiodes (APDs), and Schottky barrier photodiodes. In this paper we will concentrate on two specific devices, a Si1-x/Gex resonant-cavity p-i-n photodiode and a resonant-cavity APD with separate absorption and multiplication regions.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Suhail S. Murtaza, K. Alex Anselm, Hui Nie, C. Hu, Joe C. Campbell, Ben G. Streetman, J. C. Bean, and Larry J. Peticolas "Resonant-cavity photodetectors for optical communications", Proc. SPIE 2613, Emerging Components and Technologies for All-Optical Networks, (27 December 1995); https://doi.org/10.1117/12.228864
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