8 December 1995 Actual use of phase-shift mask
Author Affiliations +
Abstract
Attenuate phase shift masks have been developed for practical use because there are less limitations on the design, and mask defect repairs are easier. However, phase shift mask manufacturing technology improvement is needed not only for control of phase shift or transmission, but also higher accuracy and more precise patterns such as KrF application or for 4X reticle applications. This report shows the manufacturing method of the MoSiON attenuate phase shift mask with Cr border and its quality encourages its evaluation as a promising technique for finer patterns.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yoshiro Yamada, Yoshiro Yamada, Hiromasa Unno, Hiromasa Unno, Kazuaki Chiba, Kazuaki Chiba, Eisei Karikawa, Eisei Karikawa, Yasutaka Kikuchi, Yasutaka Kikuchi, Yusuke Hattori, Yusuke Hattori, Katsuhiro Kinemura, Katsuhiro Kinemura, } "Actual use of phase-shift mask", Proc. SPIE 2621, 15th Annual BACUS Symposium on Photomask Technology and Management, (8 December 1995); doi: 10.1117/12.228179; https://doi.org/10.1117/12.228179
PROCEEDINGS
7 PAGES


SHARE
RELATED CONTENT

CAR dry etching technology to produce 0.13 um reticle
Proceedings of SPIE (July 31 2002)
Toppan's work on phase-shift mask for 64MDRAM
Proceedings of SPIE (December 06 1994)
Mask CD correction method using dry-etch process
Proceedings of SPIE (October 19 2006)
Initial results for a PBS replacement resist
Proceedings of SPIE (December 06 1994)

Back to Top