Translator Disclaimer
8 December 1995 Actual use of phase-shift mask
Author Affiliations +
Attenuate phase shift masks have been developed for practical use because there are less limitations on the design, and mask defect repairs are easier. However, phase shift mask manufacturing technology improvement is needed not only for control of phase shift or transmission, but also higher accuracy and more precise patterns such as KrF application or for 4X reticle applications. This report shows the manufacturing method of the MoSiON attenuate phase shift mask with Cr border and its quality encourages its evaluation as a promising technique for finer patterns.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yoshiro Yamada, Hiromasa Unno, Kazuaki Chiba, Eisei Karikawa, Yasutaka Kikuchi, Yusuke Hattori, and Katsuhiro Kinemura "Actual use of phase-shift mask", Proc. SPIE 2621, 15th Annual BACUS Symposium on Photomask Technology and Management, (8 December 1995);


Application of dry etching to 1-Gb DRAM mask fabrication
Proceedings of SPIE (September 01 1998)
CAR dry etching technology to produce 0.13 um reticle
Proceedings of SPIE (August 01 2002)
Toppan's work on phase-shift mask for 64MDRAM
Proceedings of SPIE (December 07 1994)
Mask CD correction method using dry-etch process
Proceedings of SPIE (October 20 2006)
Use of a MEBES tool to manufacture 180-nm reticles
Proceedings of SPIE (April 28 1999)
Initial results for a PBS replacement resist
Proceedings of SPIE (December 07 1994)

Back to Top