8 December 1995 Application of alternating PSM to sub-quarter-micrometer technology using i-line lithography
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Abstract
Alternating phase shift mask (PSM) is very effective to memory devices which have highly repeated patterns. In order to apply the alternating PSM to a real device, we have investigated the design problems such as proximity effect, phase contradiction, phase transition, and linewidth variation. We also designed various hard defects to check defect printability on a wafer. Using i-line lithography (0.50 NA, 0.46 sigma) with alternating PSM, we obtained a useful DOF of 1.2 micrometer for a bit line of 256 M DRAM. The experimental and simulation results for phase-induced problems and defect printability on wafer are described in detail.
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Hung-Eil Kim, Hung-Eil Kim, Chang-Nam Ahn, Chang-Nam Ahn, KeunYoung Kim, KeunYoung Kim, Ki-Ho Baik, Ki-Ho Baik, } "Application of alternating PSM to sub-quarter-micrometer technology using i-line lithography", Proc. SPIE 2621, 15th Annual BACUS Symposium on Photomask Technology and Management, (8 December 1995); doi: 10.1117/12.228197; https://doi.org/10.1117/12.228197
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