8 December 1995 Contributions by blank vendors to critical dimension and defect errors
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Abstract
As wafer fab technology proceeds into smaller images over larger field sizes, there is a need for tighter critical dimension (CD) uniformity and smaller allowable defect sizes. The maskmaker is required to reduce these sources of error as much as possible at the reticle level. As the lithography and process contributions are reduced, contribution from the mask blank itself becomes significant. Selection of the best vendor for optimum CD and defect performance becomes critical. Unfortunately, the best vendor for CD uniformity may not be the best for defect density on certain product types, and vice versa. An additional complication is that the most critical specifications are required over larger areas of 6 multiplied by .250 substrates which have not yet been optimized by blank suppliers.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James Unruh and Benjamin George Eynon "Contributions by blank vendors to critical dimension and defect errors", Proc. SPIE 2621, 15th Annual BACUS Symposium on Photomask Technology and Management, (8 December 1995); doi: 10.1117/12.228160; https://doi.org/10.1117/12.228160
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