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8 December 1995 Evaluation of commercial and experimental resist materials for use in MEBES mask making
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The SIA roadmap has identified CD control as a critical issue in mask making. PBS, the most popular resist used for electron-beam mask making in the U.S., may not perform at the level required for production of 250 nm devices. There is a need in the industry today for precise CD control and tight control of CD uniformity, as well as a desire to dry etch thin films on masks. These industry trends make the use of an alternative resist attractive. A project was initiated to determine if an acceptable substitute to PBS exists. A group of eleven negative and positive resists were examined. These included chemically amplified materials, two part- novolacs, and a silicon-containing resist, among others. The resists were evaluated by using design of experiments (DOE) methodology whenever possible. All masks were exposed on 10 kV MEBES writing tools. The results were tabulated and compared, using a SEMATECH criterion for acceptability. Results are presented, including optimization of some of the materials for sensitivity, process robustness, and dry etch capability. While none of the materials met all criteria, several resists performed at a level that make them candidates to replace PBS. Several options are presented that are of interest to the mask maker contemplating process changes to accommodate 250 nm and 180 nm technologies.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Charles A. Sauer, Robert L. Dean, Etsuya Morita, Zoilo C. H. Tan, Bruce W. Smith, Dale E. Ewbank, Sid P. Duttagupta, and Anne Rudack "Evaluation of commercial and experimental resist materials for use in MEBES mask making", Proc. SPIE 2621, 15th Annual BACUS Symposium on Photomask Technology and Management, (8 December 1995);

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