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8 December 1995 Production performance of the EBES4 electron-beam lithography system
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The EBES4 electron beam lithography system was designed to optimize overlay and edge placement accuracy. Unique features such as 1/64 micrometer vector scan addressing, figure by figure dose modulation and a high brightness thermal field emission (TFE) gun support advanced application requirements such as electron proximity effect correction (PEC) and optical proximity effect correction (OPC). An EBES4 system has been installed, completed acceptance testing at Diamon Images, Inc. and is currently writing leading edge reticles in production mode. This paper describes the system performance and stability from both acceptance test data and production evaluations of the prototype EBES4 system installed for production. Data describing pattern placement, overlay, CD uniformity, dose modulation, butting, line edge roughness and reliability of performance is presented. A major advantage of EBES4 is the implementation of electron proximity effect correction by dose modulation of individual figures. Spatial dose corrections are calculated by commercially available software packages such as PROXECCO that refracture data and calculate dose corrections. CATSTM pattern preparation software retains the dose information and formats the writing of frequency multipliers within the EBES4 pattern files. Improvements in CD linearity using PROXECCO PEC correction software are described.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David M. Walker, Sheldon M. Kugelmass, K. A. Murray, and C. M. Rose "Production performance of the EBES4 electron-beam lithography system", Proc. SPIE 2621, 15th Annual BACUS Symposium on Photomask Technology and Management, (8 December 1995);

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