Resist charging in electron-beam lithography

Weidong Liu; Roger Fabian W. Pease

doi:10.1117/12.228205

8 December 1995 Resist charging in electron-beam lithography

Weidong Liu, Roger Fabian W. Pease

Proceedings Volume 2621, 15th Annual BACUS Symposium on Photomask Technology and Management; (1995) https://doi.org/10.1117/12.228205
Event: 15th Annual BACUS Symposium on Photomask Technology and Management '95, 1995, Santa Clara, CA, United States

Abstract

We have directly measured the surface potential of a resist film under a wide variety of e- beam exposure conditions. Here we describe results after extending the range of primary beam energy down to 1 keV; the magnitude of surface potential reaches a maximum at about 1.6 keV on 0.4 micrometer SAL601 resist. We also measured the secondary electron emission coefficient (C_se) of the same sample for the primary beam energy from 1 keV to 20 keV. Below 1 keV C_se is larger than 1 and it decreases with increased beam energy. Above 7 keV C_se becomes a constant about 0.2. Preliminary experimental results for electron beam induced conductivity indicated minimal induced current. Similar experiments were carried out on PBS resist samples and shown the similar results. Together with Monte Carlo simulation of the backscattered electrons and distribution of trapped charges, these results are used to quantitatively explain the charging behavior of the resist.

Citation Download Citation

Weidong Liu and Roger Fabian W. Pease "Resist charging in electron-beam lithography", Proc. SPIE 2621, 15th Annual BACUS Symposium on Photomask Technology and Management, (8 December 1995); https://doi.org/10.1117/12.228205

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