18 August 1995 Characteristics of an AlGaN/InGaN light-emitting diode
Author Affiliations +
Proceedings Volume 2622, Optical Engineering Midwest '95; (1995) https://doi.org/10.1117/12.216831
Event: Optical Engineering Midwest '95, 1995, Chicago, IL, United States
Abstract
In this work, we present a complete numerical simulation of a light emitting diode based on the alloys AlGaN and InGaN. Using material parameters obtained from the literature, a good comparison between numerical simulations and experiments can be achieved. For high brightness in these devices, we would like to have most of the recombination taking place at the dopants in the active region of the device. However, if this region is not doped high enough, we observe that the output power will be saturated. This therefore also gives us a method for finding the concentration of dopants in the active region.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Pankaj B. Shah, Pankaj B. Shah, Vladimir V. Mitin, Vladimir V. Mitin, } "Characteristics of an AlGaN/InGaN light-emitting diode", Proc. SPIE 2622, Optical Engineering Midwest '95, (18 August 1995); doi: 10.1117/12.216831; https://doi.org/10.1117/12.216831
PROCEEDINGS
12 PAGES


SHARE
RELATED CONTENT

Effect of barrier materials on the polarization field in the...
Proceedings of SPIE (September 08 2015)
GaN-based tunnel junction in optical devices
Proceedings of SPIE (June 12 2002)
Recent progress in AlGaN/GaN-based optoelectronic devices
Proceedings of SPIE (January 22 1997)
InGaN based high efficiency LED
Proceedings of SPIE (September 14 2007)
Simulation of the InGaN-based tandem solar cells
Proceedings of SPIE (September 10 2008)

Back to Top