8 December 1995 Basic technology of fast growing for normal and partially deuterated KDP crystals
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Proceedings Volume 2633, Solid State Lasers for Application to Inertial Confinement Fusion (ICF); (1995); doi: 10.1117/12.228324
Event: Solid State Lasers for Application to Inertial Confinement Fusion (ICF), 1995, Monterey, CA, United States
Abstract
The distribution coefficient of deuterium in the crystal depends on that of the growth solution. It was not affected, even if the saturated temperature and the supersaturation of the growth solution were changed. Thirteen percent-deuterated KDP crystal of 9 by 9 by 11 cm size was grown in which the deuterated rate was constant within the measurement error of plus or minus 1%. The excess energy due to an over heating and/or an acoustic energy to the solution and the pH control realized a higher level of supersaturation. KDP crystals were grown up to 50 mm/day.
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Kenichi Fujioka, S. Matsuo, Tadashi Kanabe, Masahiro Nakatsuka, Sadao Nakai, "Basic technology of fast growing for normal and partially deuterated KDP crystals", Proc. SPIE 2633, Solid State Lasers for Application to Inertial Confinement Fusion (ICF), (8 December 1995); doi: 10.1117/12.228324; https://doi.org/10.1117/12.228324
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KEYWORDS
Crystals

Acoustics

Diffusion

Molecules

Photography

Fusion energy

Near infrared

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