8 December 1995 Transient microwave bandwidth measurements of illuminated silicon switches for optical pulse-shape control of laser-fusion drivers
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Proceedings Volume 2633, Solid State Lasers for Application to Inertial Confinement Fusion (ICF); (1995) https://doi.org/10.1117/12.228269
Event: Solid State Lasers for Application to Inertial Confinement Fusion (ICF), 1995, Monterey, CA, United States
Abstract
The microwave transmission properties of a high-purity (greater than or equal to 40 k(Omega) (DOT)cm) single-crystal-silicon, photoconductive (PC) switch were measured while the switch was optically activated. The switch was 2.3 mm wide (the width of the microstrip electrode), 2 mm long, and 0.5 mm thick with a 0.5-mm photoconductive gap and was mounted in a 50-(Omega) microstrip transmission line. The switch was irradiated uniformly with a 150-ns FWHM pulse from a Nd:YAG laser (wavelength equals 1.064 micrometer). The insertion loss of the optically activated PC switch was nearly constant minus 0.7 dB across the measurement system bandwidth (9 GHz). Under these illumination conditions, the switch exhibited negligible bandwidth limitations. The microstrip structure by itself had an insertion loss that increased from minus 0.4 dB at 1 GHz to minus 1.4 dB at 9 GHz.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kenton Green, Kenton Green, William R. Donaldson, William R. Donaldson, Roman Sobolewski, Roman Sobolewski, Andrey V. Okishev, Andrey V. Okishev, Mark D. Skeldon, Mark D. Skeldon, Samuel A. Letzring, Samuel A. Letzring, Wolf D. Seka, Wolf D. Seka, } "Transient microwave bandwidth measurements of illuminated silicon switches for optical pulse-shape control of laser-fusion drivers", Proc. SPIE 2633, Solid State Lasers for Application to Inertial Confinement Fusion (ICF), (8 December 1995); doi: 10.1117/12.228269; https://doi.org/10.1117/12.228269
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