22 September 1995 Comparison of simulated and experimental CD-limited yield for a submicron i-line process
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Abstract
A method is presented for predicting the CD distribution and CD-limited yield of a photolithographic process using well established lithography modeling tools. The lithography simulator PROLITH/2 is used to generate a multi-variable process response space of final resist critical dimension (CD) versus focus, exposure, maximum resist development rate, and resist thickness. Sources of error are characterized for an actual 0.6 micron i-line process. By correlating the input error distribution with the process response space, a final simulated CD distribution is generated. This simulated CD distribution is compared with the actual CD distribution of the process. By implementing CD specifications, values of CD-limited yield metrics are calculated for the actual process and the simulated data.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Edward W. Charrier, Edward W. Charrier, Christopher J. Progler, Christopher J. Progler, Chris A. Mack, Chris A. Mack, } "Comparison of simulated and experimental CD-limited yield for a submicron i-line process", Proc. SPIE 2635, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis, (22 September 1995); doi: 10.1117/12.221434; https://doi.org/10.1117/12.221434
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