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22 September 1995 Highly reliable CVD-stacked oxynitride gate dielectric fabricated by in-situ rapid thermal multiprocessing
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Abstract
High-quality CVD stacked oxynitride gate dielectrics have been fabricated by in-situ rapid thermal multiprocessing. Bottom thin oxynitrides were formed by RTP of Si in the NO or N2O ambient, followed by RT-CVD deposition of SiO2 films using SiH4 and N2O. The stacked dielectrics were then subjected to in-situ rapid thermal annealing in an O2 ambient. Results show that CVD stacked oxynitride gate dielectrics have improved endurance to interface state degradation, higher charge to breakdown values, and significantly reduced defect densities compared to control thermal gate oxide.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jason Yan, L. K. Han, and Dim-Lee Kwong "Highly reliable CVD-stacked oxynitride gate dielectric fabricated by in-situ rapid thermal multiprocessing", Proc. SPIE 2635, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis, (22 September 1995); https://doi.org/10.1117/12.221440
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