Laser heterostructures reliability analysis by recombination parameter of cleaved <110> surfaces

Mikhail I. Sverdlov; Ludmila T. Anisimova; Natalja N. Ovchinnikova; Vladimir J. Philipchenko; Serguej N. Yakorev

doi:10.1117/12.221441

22 September 1995 Laser heterostructures reliability analysis by recombination parameter of cleaved <110> surfaces

Mikhail I. Sverdlov, Ludmila T. Anisimova, Natalja N. Ovchinnikova, Vladimir J. Philipchenko, Serguej N. Yakorev

Proceedings Volume 2635, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis; (1995) https://doi.org/10.1117/12.221441
Event: Microelectronic Manufacturing '95, 1995, Austin, TX, United States

Abstract

One of the main factors determining the lifetime of laser diodes (LD) based on A³B⁵ materials is degradation of the surface of radiation output. Rather informative for evaluation of radiating surface degradation characteristics is a so called recombination parameter S (DOT) L, where S is the rate of surface recombination and L - surface diffusion length. There were performed accelerated tests (at 70 degree(s)C) for forty five GaAs-GaAlAs LD, obtained by the process of liquid-phase epitaxy (LPE), which showed that LD's with recombination parameter S (DOT) L < 0.7 cm²/s assure lifetime of 100000 hours. Recombination parameter was estimated from LD's I-V characteristics measured in the current range 10^-9 - 10^-5 A. The following regularities were revealed: (1) Reducing of the LPE active area thickness ranging from 0.3 micrometers to 0.1 micrometers bring about reduction of the parameter S (DOT) L to the value of 3.5 (DOT) 10^-1 cm²/s; (2) LD's based on SQW-SC heterostructures with the active area thickness of 0.01 - -0.015 micrometers , have recombination parameters 5 - 6 (DOT) 10^-2 cm²/s; (3) Reducing of doping level in LPE-heterostructures active area also leads to decreasing of S (DOT) L to 5 - 6 (DOT) 10^-2 cm²/s.

Citation Download Citation

Mikhail I. Sverdlov, Ludmila T. Anisimova, Natalja N. Ovchinnikova, Vladimir J. Philipchenko, and Serguej N. Yakorev "Laser heterostructures reliability analysis by recombination parameter of cleaved <110> surfaces", Proc. SPIE 2635, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis, (22 September 1995); https://doi.org/10.1117/12.221441

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