22 September 1995 Laser heterostructures reliability analysis by recombination parameter of cleaved <110> surfaces
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Abstract
One of the main factors determining the lifetime of laser diodes (LD) based on A3B5 materials is degradation of the surface of radiation output. Rather informative for evaluation of radiating surface degradation characteristics is a so called recombination parameter S (DOT) L, where S is the rate of surface recombination and L - surface diffusion length. There were performed accelerated tests (at 70 degree(s)C) for forty five GaAs-GaAlAs LD, obtained by the process of liquid-phase epitaxy (LPE), which showed that LD's with recombination parameter S (DOT) L < 0.7 cm2/s assure lifetime of 100000 hours. Recombination parameter was estimated from LD's I-V characteristics measured in the current range 10-9 - 10-5 A. The following regularities were revealed: (1) Reducing of the LPE active area thickness ranging from 0.3 micrometers to 0.1 micrometers bring about reduction of the parameter S (DOT) L to the value of 3.5 (DOT) 10-1 cm2/s; (2) LD's based on SQW-SC heterostructures with the active area thickness of 0.01 - -0.015 micrometers , have recombination parameters 5 - 6 (DOT) 10-2 cm2/s; (3) Reducing of doping level in LPE-heterostructures active area also leads to decreasing of S (DOT) L to 5 - 6 (DOT) 10-2 cm2/s.
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Mikhail I. Sverdlov, Mikhail I. Sverdlov, Ludmila T. Anisimova, Ludmila T. Anisimova, Natalja N. Ovchinnikova, Natalja N. Ovchinnikova, Vladimir J. Philipchenko, Vladimir J. Philipchenko, Serguej N. Yakorev, Serguej N. Yakorev, "Laser heterostructures reliability analysis by recombination parameter of cleaved <110> surfaces", Proc. SPIE 2635, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis, (22 September 1995); doi: 10.1117/12.221441; https://doi.org/10.1117/12.221441
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