22 September 1995 Material processing and advanced well structures using high-energy implantation for EPI replacement
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With the cost of each new technology generation increasing at an alarming rate, it has become imperative that technologies which provide for process simplification and material cost reduction be seriously investigated. Many of the next generation technologies for logic as well as memory applications have incorporated some vertical modulation of the well dopant concentration. This type of structure can provide process simplification and an improved isolation strategy, but with more aggressive engineering of the substrate dopant concentration and the current gain of the parasitic bipolar transistors that exist in the CMOS structure superior, latch-up immunity has been demonstrated on both simulated and actual devices. Devices with an aggressive 2 micron P+ to N+ spacing were built with this innovative well structure and have been shown to provide outstanding latch-up performance (4X improvement in measured trigger current) as compared to that of devices built with a standard diffused well process. In addition to providing an analysis of the latch-up performance of the advanced well structure, results of an investigation of the impact of high energy implantation on the gate oxide quality, junction quality and bulk material properties is discussed.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dirk Wristers, Dirk Wristers, Chris Eiting, Chris Eiting, Wes Morris, Wes Morris, Dim-Lee Kwong, Dim-Lee Kwong, Jim Fulford, Jim Fulford, } "Material processing and advanced well structures using high-energy implantation for EPI replacement", Proc. SPIE 2635, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis, (22 September 1995); doi: 10.1117/12.221455; https://doi.org/10.1117/12.221455

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