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22 September 1995 Role of SOG and oxynitride passivation in the field inversion of CMOS circuits
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Abstract
N-channel field inversion leakage in multi-level-metal CMOS precesses is one of the adverse effects of back-end-of-line (BEOL) processing. In particular, using certain combinations of nitride passivation films, Spin-On-Glass (SOG), and TEOS planarization was shown to be very detrimental to the stability of CMOS circuits because of the induced leakage under field oxides. This work reports on a new field inversion leakage that is totally due to silicon oxynitride passivation. The SOG film used to planarize the inter-metal dielectric (IMD) layers did not have a significant role in the field inversion leakage as we were able to induce and suppress the leakage currents by only controlling the oxynitride passivation deposition conditions (with and without the SOG). In particular it is shown that a high oxynitride deposition temperature induces sever parasitic leakage currents while a low deposition temperature diminished the leakage.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Said Ghneim and Jim Fulford "Role of SOG and oxynitride passivation in the field inversion of CMOS circuits", Proc. SPIE 2635, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis, (22 September 1995); https://doi.org/10.1117/12.221442
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