22 September 1995 TiW particle control for VLSI manufacturing
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Abstract
TiW has been used extensively as the barrier metal in submicron metallization. However, TiW has also drawn much attention as the source of defect generation contributing to functional yield loss. Usually, the defects are in the form of flakes which can be detected by either using light scattering metrology tools or naked eye in severe situations. In this paper various manufacturing techniques will be presented which reduce defect during the TiW sputtering process. Both arc-sprayed process kit (chamber shield and clamping ring) and TiW paste at fixed intervals have been proven to be effective in reducing TiW particles. Implementation of these two techniques is relatively simple and has been used very successfully in Chartered's 6 inch wafer fab. Another study shows that by reducing the process kit thermal cycling through continuously having the bake-out lamp turned on is effective for particle control. Effect of the grain size of TiW sputter target and the application of Particle Gettering (PG) foil will also be discussed in detail as other means of particle reduction.
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Fang Hong Gn, Chuin Boon Yeap, He Ming Li, E. Z. Liu, Heng Lai Chew, "TiW particle control for VLSI manufacturing", Proc. SPIE 2635, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis, (22 September 1995); doi: 10.1117/12.221458; https://doi.org/10.1117/12.221458
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