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15 September 1995 C-V model of the MOS structures with a shallow p-n junction for the electro-physical parameters and profile of the doping determination
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Abstract
When threshold voltage of CMOS-cell is corrected by low-dose ion- implantation method a shallow p-n junction is formed near oxide- semiconductor interface with junction depth approximately equal to Debye length. Known methods of electro-physical parameters control by C-V characteristic cannot be applied for these MOS structures directly. So, for the task of the determination of electro-physical parameters and doping profile in nonuniform substrate MOS structure the numerical solution of Poisson equation is commonly used. The approach to the designing of a low frequency C-V characteristic is considered in this paper for MOS structures with substrate doping impurity of different types. The mathematical model is based on approximate solution of Poisson equation and takes into account the majority and minority carriers. This model can be simply tune for any modeling impurity profile and allows to extract parameters such as dose of the implanted impurity, substrate impurity concentration, p-n junction depth, effective flat-band voltage, oxide charge density, oxide thickness, profile doping parameters. The cases of abrupt and gradual impurity distribution were considered. The parameters of MOS structure and impurities profile for different doping doses were extracted from experimental C-V curves. The comparison of experimental and modeling C-V characteristics shows good agreement (5-10%).
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mikhail G. Kuznetsov, Alexander A. Kokin, and Sergey A. Kokin "C-V model of the MOS structures with a shallow p-n junction for the electro-physical parameters and profile of the doping determination", Proc. SPIE 2636, Microelectronic Device and Multilevel Interconnection Technology, (15 September 1995); https://doi.org/10.1117/12.221124
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