15 September 1995 Effects of PE-TEOS process on O3-TEOS characteristics and device reliability
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Abstract
This work studies the effect of PE-TEOS underlayer on O3-TEOS based intermetal dielectric (IMD) in terms of gap filling, moisture resistance, and device reliability. PE-TEOS films investigated here were formed by mixed-frequency plasma process and were differed by their reaction oxidizers and/or plasma powers. It is found that the bottom and sidewall step coverages of PE-TEOS vary with processing conditions, with both degrading as nitrogen content or film stress increases. By optimizing the underlayer thickness voidless gap fill has been achieved by O3-TEOS for 0.5 micrometers generation. To eliminate moisture absorption the deposited O3-TEOS was then integrated with SOG etchback for planarization. The integrated IMD has been evaluated by hot carrier stressing, which suggests that increasing PE-TEOS stress helps improve device reliability. For a fixed stress, the increased amount of oxygen or nitrogen also help inhibit hot carrier aging. To obtain best device reliability, a tradeoff exists between the moisture resistance and gap filling capability of PE-TEOS underlayer.
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Syun-Ming Jang, Yu-Min Lin, Peter Lee, L. M. Liu, C. H. Yu, Tan Fu Lei, M. S. Lin, "Effects of PE-TEOS process on O3-TEOS characteristics and device reliability", Proc. SPIE 2636, Microelectronic Device and Multilevel Interconnection Technology, (15 September 1995); doi: 10.1117/12.221145; https://doi.org/10.1117/12.221145
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