15 September 1995 Formation of TiN films by metal organic chemical vapor deposition using TDEAT
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Abstract
The effect of carrier gases such as nitrogen (N2) and helium (He) on the properties, growth rate, and conformality of TiN films form tetrakis-diethylamido-titanium (TDEAT) has been investigated. TiN growth rate and properties are significantly influenced by carrier gases. He carrier gas lowers the growth rate and yields the films with low resistivities (approximately equals 2000 (mu) (Omega) -cm) and low level of oxygen contamination. Noted that the resistivity does not increase further upon air-exposure. On the contrary, N2 carrier gas produces TiN films with relatively high resistivities (<EQ 4000 (mu) (Omega) -cm) and high level oxygen contamination. Moreover, the resistivity continues to change with time. AES analysis shows that the different air-sensitivity of TiN films deposited using two carrier gases is attributed to the presence of oxygen in the films. In addition, TDEAT single sourced process provides the step coverage of 18approximately equals 65% in 2.0 aspect ratio contracts and He carrier gas improves the step coverage slightly, compared with N2 carrier gas. Furthermore, study of the TDEAT/NH3 system reveals that sufficient NH3 addition does not degrade the conformality of TiN films and lowers the resistivity, irrespective of carrier gas.
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Jaegab Lee, Jaeho Kim, Choogsoo Chi, Sangjoon Park, Kyung-Il Lee, Jaejeong Kim, "Formation of TiN films by metal organic chemical vapor deposition using TDEAT", Proc. SPIE 2636, Microelectronic Device and Multilevel Interconnection Technology, (15 September 1995); doi: 10.1117/12.221138; https://doi.org/10.1117/12.221138
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