In-line LOCOS active width characterization using surface SEM

Sudhir K. Madan; Tom Holloway

doi:10.1117/12.221135

15 September 1995 In-line LOCOS active width characterization using surface SEM

Sudhir K. Madan, Tom Holloway

Proceedings Volume 2636, Microelectronic Device and Multilevel Interconnection Technology; (1995) https://doi.org/10.1117/12.221135
Event: Microelectronic Manufacturing '95, 1995, Austin, TX, United States

Abstract

A simple and nondestructive low energy electron beam surface SEM is used in-line to measure the active width with LOCOS isolation. The method resulted in photos with excellent contrast between the silicon and oxide. Also a good correlation between the surface SEM data and electrical measurements is obtained in the submicron region where the active width reduction is a strong function of the LOCOS nitride width. The method can be used to significantly reduce the technology development time by accurately measuring the active width in-line.

Citation Download Citation

Sudhir K. Madan and Tom Holloway "In-line LOCOS active width characterization using surface SEM", Proc. SPIE 2636, Microelectronic Device and Multilevel Interconnection Technology, (15 September 1995); https://doi.org/10.1117/12.221135

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