15 September 1995 In-line LOCOS active width characterization using surface SEM
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Abstract
A simple and nondestructive low energy electron beam surface SEM is used in-line to measure the active width with LOCOS isolation. The method resulted in photos with excellent contrast between the silicon and oxide. Also a good correlation between the surface SEM data and electrical measurements is obtained in the submicron region where the active width reduction is a strong function of the LOCOS nitride width. The method can be used to significantly reduce the technology development time by accurately measuring the active width in-line.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sudhir K. Madan, Sudhir K. Madan, Tom Holloway, Tom Holloway, } "In-line LOCOS active width characterization using surface SEM", Proc. SPIE 2636, Microelectronic Device and Multilevel Interconnection Technology, (15 September 1995); doi: 10.1117/12.221135; https://doi.org/10.1117/12.221135
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