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15 September 1995 Integrity of N2O oxides in WSi2 polycide process
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Abstract
This paper reports on the integrity of thin N2O oxides in tungsten polycide (poly-Si/WSi2 stack) gated MOS structures, which was characterized by their charge-to-breakdown (QBD). In this study, WSi2 films were formed either by chemical vapor deposition (CVD) or sputtering. It is found that with CVD-WSi2 gate, N2O gate oxide has a much degraded integrity in terms of high infant-mortality rate and low QBD values compared with the sputtered WSi2 gate.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chung Jen Chien, Jeong Yeol Choi, Guo-Qiang Lo, and Chuen-Der Lien "Integrity of N2O oxides in WSi2 polycide process", Proc. SPIE 2636, Microelectronic Device and Multilevel Interconnection Technology, (15 September 1995); https://doi.org/10.1117/12.221128
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