Translator Disclaimer
15 September 1995 Novel LOCOS isolation process for producing highly reliable oxides
Author Affiliations +
Abstract
As device dimensions become scaled to the deep sub-micron regime, the field oxidation process is most significant in achieving reliable oxide quality in gate and LOCOS edge regions. Overall, the role of the field oxide must be to provide excellent isolation and to remain reliable at the LOCOS edge and have minimum encroachment.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mark I. Gardner and Daniel Kadoch "Novel LOCOS isolation process for producing highly reliable oxides", Proc. SPIE 2636, Microelectronic Device and Multilevel Interconnection Technology, (15 September 1995); https://doi.org/10.1117/12.221131
PROCEEDINGS
9 PAGES


SHARE
Advertisement
Advertisement
Back to Top